unisonic technologies co., ltd UP1620 preliminary pnp epitaxial silicon transistor www.unisonic.com.tw 1 of 3 copyright ? 2014 unisonic technologies co., ltd qw-r214-025.a pnp silicon power transistor ? description the utc UP1620 is a silicon pnp silicon power transistor, it uses utc?s advanced technology to provide the customers with high collector-emitter breakdown voltage and ultra-high dc current gain, etc. ? features * high collector-emitter breakdown voltage * ultra-high dc current gain ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 UP1620l-x-t3p-t UP1620g-x-t3p-t to-3p b c e tube note: pin assignment: a: anode, k: cathode ? marking information package marking to-3p
UP1620 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r214-025.a ? absolute maximum ratings (t a =25 c, unless otherwise specified) parameter symbol ratings unit collector-base voltage v cbo -160 v collector-emitter voltage v ceo -150 v emitter-base voltage v ebo -5 v collector current i c -10 a base current i b -1 a collector power dissipation (t c =25c) pc 150 w junction temperature t j 150 c storage temperature t stg -55 ~+150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 c, unless otherwise specified) parameter symbol test conditions min typ max unit collector cut-off current i cbo v cb =-160v, i e =0a -100 a emitter cut-off current i ebo v eb =-5v, i c =0a -100 a collector-emitter voltage v ceo i c =-30ma -150 v dc current gain h fe v ce =-4v, i c =-7a 5000 30000 collector-emitter satu ration voltage v ce ( sat ) i c =-7a, i b =-7ma -2.5 v base-emitter satura tion voltage v be ( sat ) i c =-7a, i b =-7ma -3.0 v current gain bandwidth product f t v ce =-12v, i e =-2a 50 mhz output capacitance c ob v cb =-10v, f=1mhz, i e =0a 230 pf ? classification of h fe rank o p y range 5000 ~ 12000 6500 ~ 20000 15000 ~ 30000
UP1620 preliminary pnp epitaxial silicon transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r214-025.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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